Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Amplifiers/Converters
 
 
Amplifiers/Converters  

'Thinnest' MEMS oscillator debuts

Posted: 25 Sep 2008     Print Version  Bookmark and Share

Keywords:MEMS oscillator  die stacking  mechanical MEMS die  ASIC 

SiTime Corp. debuts what it touts as the world's thinnest MEMS oscillator at just 0.25mm. This new device is being targeted at applications such as smartcards, ultrathin cell phones, system-in-package modules, flash storage units and other multi-chip modules.

SiTime said it unstacked two dies in its previous SiTime8002 MEMS oscillator, slimming it to one-third its previous thickness but increasing its surface area.

Deep-reactive ion etching creates deep, high-aspect ratio silicon structures—the vibrating element of the world's thinnest MEMS oscillator.

SiTime's SiT8002 used die stacking to combine the mechanical MEMS die and its ASIC, but the new SiT8002XT puts the two die side-by-side. The new chip measures 3.5mm x 3mm, but is only 0.25mm thick compared to 0.85mm previously.

The four-pad XLLGA package used for the SiT8002XT can be factory programmed in less than 48hr at frequencies between 1MHz and 125MHz, voltages between 1.8V and 3.3V and either 100 or 500 parts per million frequency tolerance.

Samples are available now, with production quantities scheduled for Q4 08.

- R. Colin Johnson
EE Times





Comment on "'Thinnest' MEMS oscillator debuts"
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top