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Toshiba touts fastest circuit tech for embedded DRAM

Posted: 22 Feb 2008     Print Version  Bookmark and Share

Keywords:circuit technology  embedded DRAM  System LSI  graphic processing 

The world's fastest circuit technology for embedded DRAM for System LSI has been claimed by Toshiba Corp. Achieving a speed of 833MHz at 32Mb density, the technology will be applied to graphic processing LSI.

Embedded DRAM are applied to SoCs for graphic application because they can read larger amounts of data at higher speeds than external memory. As video images achieve higher levels of definition, higher processing speeds of larger densities are required.

Speedy innovation
To realise high speed operation, Toshiba applied a "pseudo two port system," a technology that virtually divides the overall memory into two and then reads and writes data in parallel and alternately. By replacing conventional serial read and write system with the new parallel technology, and optimising such circuits as the command structure, Toshiba achieved the world's highest level of embedded DRAM performance at 32Mb, a density actually applicable to products.

System LSI with embedded DRAM memory will find application in next generation high-end digital consumer products, game applications, mobile phones, projectors and other image-related applications that require high speed transfer of large volumes of data. Toshiba plans to apply this technology to its leading edge 65nm system LSI process, and to meet market demand for advanced graphic applications through the early launch of SoC integrating the new embedded DRAM.

Toshiba Corp. is one of the exhibitors in the upcoming IIC-China 2008.




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