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RF/Microwave  

EDGE PAs improve handset battery life

Posted: 15 Feb 2008     Print Version  Bookmark and Share

Keywords:PA module  TriQuint HADRON  3G phones 

TriQuint Semiconductor Inc. introduces the first two members of its HADRON II PA module family, the TQM7M5012 and TQM7M5005, for 3G WEDGE (W-CDMA + EDGE) phones.

The second-generation EDGE PAs are designed using TriQuint's CuFlip copper bump technology, improving RF performance while reducing current consumption to provide longer device battery life. Debuting with a 5-by-5mm footprint, the TQM7M5012 and TQM7M5005 are 50 per cent smaller than the previous generation, providing handset manufacturers additional board space to add other rich features.

Available in EDGE-Polar and EDGE-Linear versions, both products have been optimised to deliver optimum current consumption in the critical GMSK mode, which significantly improves handset battery life.

The TQM7M5012 for EDGE-Polar applications is aligned with Qualcomm's newest 3G multimode transceivers. Compared to the previous generation, TQM7M5012 offers even lower Rx band noise power level to help eliminate external components in the radio. The TQM7M5005 is designed to work with some leading 2.5G and 3G transceivers that require a linear power amplifier.

TriQuint has developed RF radio application and evaluation boards for both the TQM7M5012 and the TQM7M5005 to demonstrate the features and compatibility of the devices, enabling phone manufacturers to shorten handset development time. TriQuint is planning to deliver samples to lead customers and start production in the 1H.

- Ismini Scouras
eeProductCenter




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