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Power MOSFETs simplify power management circuitry

Posted: 20 Aug 2007     Print Version  Bookmark and Share

Keywords:power MOSFET  on-resistance rating  power management 

Vishay Intertechnology Inc. has introduced what it touts as the industry's first power MOSFETs with on-resistance ratings at a 1.2V gate-to-source voltage, to help designers simplify power management circuitry while extending battery run times in portable electronic systems.

The new 1.2-V-rated Vishay Siliconix TrenchFET devices bring the MOSFET turn-on voltage into alignment with the 1.2V to 1.3V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8V.

In MOSFETs where 1.5V is the lowest rating, on-resistance tends to increase exponentially at lower, unspecified gate-to-source voltages such as 1.2V. By contrast, these new 1.2-V TrenchFETs offer guaranteed low n-channel on-resistance as low as 0.041Ω and p-channel on-resistance as low as 0.095Ω at a 1.2V gate drive.

Typical applications for the new devices include load, power amplifier, and battery charger switching in cell phones, PDAs, MP3 players, digital cameras, and other portable systems. In addition to saving on battery power with their low on-resistance, the new devices will save on space with package dimensions as small as 1.5mm x 1.5mm.

Samples and production quantities of the seven 1.2 devices—n-channel SiA414DJ (PowerPAK SC-70), Si8424DB (MICRO FOOT), SiB414DK (PowerPAK SC-75), p-channel SiA417DJ (PowerPAK SC-70), Si8429DB (MICRO FOOT), SiB417DK (PowerPAK SC-75) and previously released p-channel Si1499DH (SC-70)—are available now, with lead times of eight to 10 weeks for larger orders.




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