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Toshiba flash memory stores apps, data on same chip

Posted: 26 Jun 2007     Print Version  Bookmark and Share

Keywords:embedded NAND flash  NAND interface  logical block address access  LBA controller 

mobileLBA-NAND from <a href=Toshiba" ALIGN="RIGHT">

Toshiba Corp. in association with Toshiba America Electronic Components Inc. (TAEC) has developed a new series of embedded NAND flash memories for mobile phones offering both a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area, allowing applications and data to be stored on the same chip.

This development allows cell phone manufacturers that have been using SLC NAND with a standard NAND interface in multi-chip packages (MCPs) to easily take advantage of the lower cost and higher density advantages of MLC NAND while optimising NAND performance to meet their requirements.

The five memories in the mobileLBA-NAND series range in capacity from 2Gbits to 32Gbits. The 2Gbit, 4Gbit and 8Gbit versions can be allocated as SLC up to their full capacity, while the 16Gbit and 32Gbit versions can support up to 8Gbit of SLC, offering manufacturers greater flexibility in allocating memory in their products.

Alongside a logical block address access (LBA) controller, all of the new mobileLBA-NAND memories integrate a unique control function able to address both SLC and MLC. SLC supports high-speed data read and write and is suited to storing programs for mobile phone functions. In the new devices, manufacturers are free to allocate part of the memory to SLC, with the MLC area reserved for storing data, such a digital photographs and video and music files. This design will allow developers to reduce the number of chips in a product's system, saving space and contributing to higher integration and multi-functionality.

The new memories also support a standard NAND flash interface, which means they can easily be introduced into current generations of products. The LBA controller carries out functions, such as writing block management and error code correction (ECC), which minimises any changes in the host controller specification. As a result, the new memories offer developers applicable solutions for reducing development time and costs for new and upgraded products.

The device features power supply voltage of 1.7-1.95V (interface) and 1.7-1.95V or 2.6-3.3V (memory core). Samples of mobileLBA-NAND packaged in MCPs will be available in August. The new NAND flash memories will be shipped primarily in MCPs with FBGA.




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