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IGBT ups switching speed without increasing ON voltage

Posted: 29 May 2007     Print Version  Bookmark and Share

Keywords:IGBT  CSTBT chip technology  fast switching behaviour 

Mitsubishi Electric Europe's 1,200V IGBT with fast switching feature

Mitsubishi Electric Europe BV has released a NFM series of IGBTs that shows a fast switching behaviour without increasing on-state voltage drop. The new series combines fifth-generation carrier stored trench bipolar transistor (CSTBT) chip technology with light punch through (LPT) wafer. They devices are suitable for applications, which involves turn-on soft switching and turn-off hard switching, such as medical equipment, induction heating, welding equipment and resonant circuits.

The turn-off speed for general use IGBTs is rather slow, making them difficult to use in these applications. The devices which are optimised for 30kHZ, specialise in high speed turn-off characteristics without a considerable increase in losses by maintaining the typical saturation voltage Vce(sat) to 3V at rated collector current and a junction temperature of 125?C.

The new NFM series maintains the highest possible compatibility with the European standard package, which ensures the superior performance with minimum dislocation of the product lines.

The new NFM series is available with a rated voltage of 1,200V and rated current range of 100-300A in dual modules and also in single modules at 1,200V with rated current of 400A, 600A. The new NFM product line is RoHS-compliant to ensure environmental compatibility and reliable operation.

- Henri Arnold
EE Times Europe




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