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Memory/Storage  

Qimonda engineers to report 58nm DRAM at IEDM

Posted: 12 Sep 2006     Print Version  Bookmark and Share

Keywords:Qimonda  Infineon  58nm  DRAM  Samsung Electronics 

Engineers from Qimonda AG are set to report on a 58nm DRAM manufacturing process technology at the International Electron Devices Meeting (IEDM) due to be held in San Francisco in December.

The most advanced fully integrated and production-worthy technologies for producing dense DRAM memories are in the 70nm to 80nm range. Samsung Electronics Co. Ltd recently announced it had begun mass producing 1Gbit DRAMs using 80nm process technology.

Researchers from Qimonda, the spinoff from Infineon Technologies, are expected to present on a fully integrated 58nm process technology which they used to produce a 512Mbit DRAM operating at between 1.2V and 1.35V, with access times that support data rates of 3.2Gbps per pin. The abstract submitted to EE Times discusses the paper "A 58nm Trench DRAM Technology," under the title "Smallest Integrated DRAM Technology."

The abstract goes on to say that the DRAM features an extended U-shaped cell structure, a metal-insulator-silicon trench capacitor with a high-k gate dielectric and metal-in-collar structure, and a k = 2.8 dielectric for use in back-end manufacturing of interconnections.

- Peter Clarke
EE Times Europe




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