Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Power/Alternative Energy
 
 
Power/Alternative Energy  

Infineon launches its second-gen Schottky diodes

Posted: 27 Mar 2006     Print Version  Bookmark and Share

Keywords:thinQ!  Schottky diodes  silicon carbide  SiC  Infineon 

Infineon Technologies AG has launched its second-generation Schottky diodes based on silicon carbide (SiC) technology at the Applied Power Electronics Conference in Dallas, Texas.

The enhanced thinQ! 2G family of SiC diodes offers at least double the surge-current capability and improved ruggedness compared to the first generation product. This allows them to handle higher start-up inrush and over currents and makes them suitable for power factor correction applications in switched-mode power supplies in computer, consumer, communications, lighting ballast and industrial applications. In addition, the over-current and over-voltage characteristics are significantly improved by using a merged PIN-Schottky structure, said the company.

A key benefit of these Schottky diodes is that system designers and power supply manufacturers can use smaller and cheaper diodes, which can result in a 30 to 50 per cent reduction in diode costs and increased application ruggedness, according to the company.

"Reduced switching losses and higher switching frequencies allow the use of smaller, cheaper and fewer passive components and cost-effective transistors. We expect that our second generation will move the entry point for the use of SiC devices to significantly lower power levels," said Dr. Gerald Deboy, principal technical marketing, power management & supply at Infineon Technologies, in a statement.

Unlike conventional silicon PIN diodes, SiC Schottky diodes don't exhibit any reverse recovery charge and current during hard commutation, said the company, which results in very low switching losses for high-frequency operation. In addition, switching performance is independent of forward current, switching speed and temperature.

Samples of the SiC Schottky diodes are available with blocking voltages of 600V (4A, 5A, 6A, 8A, 2 x 5A, 2 x 6A, 2 x 8A) in a compact TO-220 package and in a TO-252 (D-Pak, MSL3) package. The SiC Schottky diode IDT04S60C (4A) is priced at less than Rs.79.65 ($1.80) per unit in quantities of 10,000.

- Gina Roos
eeProductCenter




Comment on "Infineon launches its second-gen Sch..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top