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Power MOSFETs offer low on-resistance values

Posted: 05 Dec 2005     Print Version  Bookmark and Share

Keywords:power MOSFET  PowerPAK  Vishay Intertechnology 

Vishay Intertechnology Inc. is offering 17 new power MOSFETs housed in the compact PowerPAK 12128 package. The MOSFETs offer on-resistance values down to 3.7 mΩ.

According to the company, these TrenchFET Gen II devices deliver significant space savings with dimensions of 3.3-by-3.3-by-1mm, which is about 1/3 the size of the SO8 package, as well as low thermal resistance of <2°C/W for an eightfold improvement when compared with SO8 devices.

Designed for synchronous rectification, synchronous buck and intermediate switching applications in point of load converters and high-density DC/DC converters used in datacom systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance, said the press release. Vishay added that with the MOSFETs' excellent electrical performance, these devices serve as a viable replacement for SO-8 devices in many applications.

The 12V through 40V single n-channel devices feature on-resistance values ranging from 3.7 mΩ to 10 mΩ at a 4.5V gate drive. This includes the 12V Si7104DN; 20V Si7106DN, Si7108DN and Si7110DN; 30V Si7112DN and Si7114DN; and 40V Si7116DN.

The dual n-channel devices that offer on-resistance values down to 36 mΩ include the 30V Si7212DN and Si7214DN, 40V Si7222DN, and 60V Si7220DN.

Also released in the PowerPAK 1212-8 package are the single-channel 60V Si7120DN, 75V Si7812DN, 150V Si7818DN, 220V Si7302DN, and 250V Si7802DN. These devices feature on-resistance values ranging from 135 mΩ to 435 mΩ at a 10V gate drive.

Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are already available, with lead times of 12 weeks for larger orders.




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