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In-Situ 4000 process monitor measurement of GaN growth rate as a function of substrate temperature

Posted: 07 Sep 2001     Print Version  Bookmark and Share

Keywords:svt  in situ 4000  substrate  deposition  wafer 

This application note discusses monitoring a successful growth process of GaN on a (0001) sapphire substrate using the In-Situ 4000 Process Monitor.

View the PDF document for more information.



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